Candidatei-me online. O processo levou 4 semanas. Fui entrevistado pela pSemi (San Diego, CA) em set. de 2012
Entrevista
Initial 45 minutes technical interview followed by an onsite interview. Asked the details about the research project on my resume. Other questions involve device physics in MOSFET and HEMT devices.
Perguntas de entrevista [1]
Pergunta 1
What equation describe the filed-charge characteristic in the N+ AlGaAs layer of the HEMT device.
